Elahipanah, Hossein: search on Z-Library

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1

Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High-Voltage SiC BJTs and Darlington Transistors

Elahipanah, Hossein, Salemi, Arash, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 5.11 MB

english, 2016

2

4.5-kV 20-mΩ.cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension

Elahipanah, Hossein, Salemi, Arash, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

3

An Intermediate Frequency Amplifier for High-Temperature Applications

Hussain, Muhammad Waqar, Elahipanah, Hossein, Schroder, Stephan, Rodriguez, Saul, Malm, Bengt Gunnar, Ostling, Mikael, Rusu, Ana

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.02 MB

english, 2018

4

Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

Naderi, Ali, Noorbakhsh, S. Mohammad, Elahipanah, Hossein

Journal:

Journal of Nanomaterials

Year:

2012

Language:

english

File:

PDF, 1.44 MB

english, 2012

5

Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs

Salemi, Arash, Elahipanah, Hossein, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 652 KB

english, 2015

6

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Area- and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance

Salemi, Arash, Elahipanah, Hossein, Malm, Gunnar, Zetterling, Carl-Mikael, Ostling, Mikael

Year:

2015

Language:

english

File:

PDF, 511 KB

english, 2015

7

Silicon Carbide BJT Oscillator Design Using S-Parameters

Hussain, Muhammad Waqar, Elahipanah, Hossein, Rodriguez, Saul, Malm, Bengt Gunnar, Rusu, Ana

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 1.72 MB

2019

8

Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

Elahipanah, Hossein, Thierry-Jebali, Nicolas, Reshanov, Sergey A., Kaplan, Wlodek, Zhang, A., Lim, Jang Kwon, Bakowski, Mietek, Östling, Mikael, Schöner, Adolf

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 661 KB

english, 2017

9

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Salemi, Arash, Elahipanah, Hossein, Buono, Benedetto, Hallen, Anders, Hassan, Jawad Ul, Bergman, Peder, Malm, Gunnar, Zetterling, Carl-Mikael, Ostling, Mikael

Year:

2015

Language:

english

File:

PDF, 814 KB

english, 2015

10

Errata for “An Intermediate Frequency Amplifier for High-Temperature Applications” [Apr 18 1411-1418]

Hussain, Muhammad Waqar, Elahipanah, Hossein, Schroder, Stephan, Rodriguez, Saul, Malm, Bengt Gunnar, Ostling, Mikael, Rusu, Ana

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 297 KB

english, 2019

11

15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain

Salemi, Arash, Elahipanah, Hossein, Jacobs, Keijo, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 1.03 MB

english, 2018

12

A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology

Hussain, Muhammad Waqar, Elahipanah, Hossein, Zumbro, John E., Schroder, Stephan, Rodriguez, Saul, Malm, Bengt Gunnar, Mantooth, Homer Alan, Rusu, Ana

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 1.55 MB

english, 2018

13

[IEEE ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC) - Leuven, Belgium (2017.9.11-2017.9.14)] 2017 47th European Solid-State Device Research Conference (ESSDERC) - Gated base structure for improved current gain in SiC bipolar technology

Malm, B. Gunnar, Elahipanah, Hossein, Salemi, Arash, Ostling, Mikael

Year:

2017

Language:

english

File:

PDF, 1.28 MB

english, 2017

14

A Comprehensive Study on the Geometrical Effects in High-Power 4H–SiC BJTs

Salemi, Arash, Elahipanah, Hossein, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.93 MB

english, 2017

15

Simulation and optimization of high breakdown double-recessed 4H-SiC MESFET with metal plate termination technique

Hossein Elahipanah

Journal:

Superlattices and Microstructures

Year:

2010

Language:

english

File:

PDF, 762 KB

english, 2010

16

500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits

Elahipanah, Hossein, Kargarrazi, S., Salemi, A., Ostling, Mikael, Zetterling, Carl-Mikael

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 929 KB

english, 2017

17

Improved 4H–SiC MESFET with double source field plate structures

S. Mohammad Noorbakhsh, Hossein Elahipanah

Journal:

Superlattices and Microstructures

Year:

2012

Language:

english

File:

PDF, 861 KB

english, 2012

18

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

Salemi, Arash, Elahipanah, Hossein, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2018

Language:

english

File:

PDF, 1.18 MB

english, 2018

19

A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices

Elahipanah, Hossein, Orouji, Ali A.

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 226 KB

english, 2009

20

10+ kV Implantation-Free 4H-SiC PiN Diodes

Salemi, Arash, Elahipanah, Hossein, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 552 KB

english, 2017

21

500°C SiC PWM Integrated Circuit

Kargarrazi, Saleh, Elahipanah, Hossein, Saggini, Stefano, Senesky, Debbie, Zetterling, Carl-Mikael

Journal:

IEEE Transactions on Power Electronics

Year:

2018

Language:

english

File:

PDF, 1.63 MB

english, 2018

22

Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology

Shakir, Muhammad, Elahipanah, Hossein, Hedayati, Raheleh, Zetterling, Carl Mikael

Journal:

Materials Science Forum

Year:

2018

Language:

english

File:

PDF, 2.96 MB

english, 2018

23

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 500°C SiC-based driver IC for SiC power MOSFETs

Kargarrazi, Saleh, Elahipanah, Hossein, Tong, Zikang, Senesky, Debbie, Zetterling, Carl-Mikael

Year:

2019

Language:

english

File:

PDF, 1.51 MB

english, 2019

24

Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs

Salemi, Arash, Elahipanah, Hossein, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 675 KB

english, 2016

25

[IEEE 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Fayetteville, AR, USA (2016.11.7-2016.11.9)] 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - High-temperature passive components for extreme environments

Colmenares, Juan, Kargarrazi, Saleh, Elahipanah, Hossein, Nee, Hans-Peter, Zetterling, Carl-Mikael

Year:

2016

Language:

english

File:

PDF, 564 KB

english, 2016

26

Gain improvement and microwave operation of 4H–SiC MESFET with a new recessed metal ring structure

Hossein Elahipanah, Ali A. Orouji

Journal:

Microelectronics Journal

Year:

2012

Language:

english

File:

PDF, 709 KB

english, 2012

27

500 °C, High Current Linear Voltage Regulator in 4H-SiC BJT Technology

Kargarrazi, Saleh, Elahipanah, Hossein, Rodriguez, Saul, Zetterling, Carl-Mikael

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 1.13 MB

english, 2018

28

Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges

Salemi, Arash, Elahipanah, Hossein, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 508 KB

english, 2015

29

Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

Ekström, Mattias, Hou, Shuoben, Elahipanah, Hossein, Salemi, Arash, Östling, Mikael, Zetterling, Carl Mikael

Journal:

Materials Science Forum

Year:

2018

Language:

english

File:

PDF, 987 KB

english, 2018

30

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT

Salemi, Arash, Elahipanah, Hossein, Buono, Benedetto, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 1.51 MB

english, 2013

31

Record gain at 3.1 GHz of 4H-SiC high power RF MESFET

Hossein Elahipanah

Journal:

Microelectronics Journal

Year:

2011

Language:

english

File:

PDF, 584 KB

english, 2011

32

Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures

Elahipanah, Hossein, Salemi, Arash, Buono, Benedetto, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 397 KB

english, 2013

33

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices

Elahipanah, Hossein, Salemi, Arash, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.75 MB

english, 2016

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